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BUK108-50GL Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BUK108-50GL Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 11 page Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFET TRANSFER CHARACTERISTICS T mb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 10 V; IDM = 7.5 A tp ≤ 300 µs; 5 9 - S δ ≤ 0.01 I D(SC) Drain current 1 V DS = 13 V; VIS = 5 V - 25 - A SWITCHING CHARACTERISTICS T mb = 25 ˚C. R I = 50 Ω . Refer to waveform figures and test circuits. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT t d on Turn-on delay time V DD = 13 V; VIS = 5 V - 1.5 - µs t r Rise time resistive load R L = 4 Ω -8 - µs t d off Turn-off delay time V DD = 13 V; VIS = 0 V - 6 - µs t f Fall time resistive load R L = 4 Ω - 4.5 - µs t d on Turn-on delay time V DD = 13 V; VIS = 5 V - 1.5 - µs t r Rise time inductive load I DM = 3 A - 1 - µs t d off Turn-off delay time V DD = 13 V; VIS = 0 V - 10 - µs t f Fall time inductive load I DM = 3 A - 0.5 - µs REVERSE DIODE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I S Continuous forward current T mb ≤ 25 ˚C; VIS = 0 V - 13.5 A REVERSE DIODE CHARACTERISTICS T mb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V SDS Forward voltage I S = 15 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V t rr Reverse recovery time not applicable 2 -- -- ENVELOPE CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT L d Internal drain inductance Measured from upper edge of tab - 2.5 - nH to centre of die L s Internal source inductance Measured from source lead - 7.5 - nH soldering point to source bond pad 1 During overload before short circuit load protection operates. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery. June 1996 4 Rev 1.000 |
Numéro de pièce similaire - BUK108-50GL |
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Description similaire - BUK108-50GL |
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