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BUK104-50SP Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BUK104-50SP Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 14 page Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic V DS Continuous drain source voltage 50 V envelope, intended as a general I D Continuous drain current 15 A purpose switch for automotive P tot Total power dissipation 40 W systems and other applications. T j Continuous junction temperature 150 ˚C R DS(ON) Drain-source on-state resistance APPLICATIONS V IS = 5 V 125 m Ω V IS = 7 V 100 m Ω General controller for driving lamps SYMBOL PARAMETER NOM. UNIT motors solenoids V PSN Protection supply voltage heaters BUK104-50L 5V BUK104-50S 10 V FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage Low on-state resistance Logic and protection supply from separate pin Low operating supply current Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by protection supply Protection circuit condition indicated by flag pin 5 V logic compatible input level Separate input pin for higher frequency drive ESD protection on input, flag and protection supply pins Over voltage clamping for turn off of inductive loads Both linear and switching operation are possible Fig.1. Elements of the TOPFET. PINNING - SOT263 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 input 2 flag 3 drain 4 protection supply 5 source Fig. 2. Type numbers ending with suffix P refer to leadform 263-01. Fig. 3. tab drain POWER MOSFET DRAIN SOURCE INPUT O/V CLAMP LOGIC AND PROTECTION PROTECTION SUPPLY FLAG leadform tab 1 2 345 263-01 D S I TOPFET P F P January 1993 1 Rev 1.200 |
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Description similaire - BUK104-50SP |
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