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B40C800DM Fiches technique(PDF) 3 Page - Vishay Siliconix |
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B40C800DM Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Document Number 88533 09-Oct-06 www.vishay.com 3 B40C800DM thru B380C800DM Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 4. Typical Forward Characteristics Per Diode 0 10 100 0 10 20 30 40 50 1.0 Cycle Number of Cycles at 50 Hz Tj = 125 °C 10 ms Single Sine-Wave 0.4 0.8 1.2 10 1 0.1 0.01 0.6 1.0 1.4 Tj = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Instantaneous Forward Voltage (V) Figure 5. Typical Reverse Leakage Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode 0 20 40 60 80 100 0.01 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) Tj = 100 °C Tj = 25 °C 1 10 100 1 10 100 Tj = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Reverse Voltage (V) 0.315 (8.00) 0.285 (7.24) 0.013 (3.3) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6) 0.255 (6.5) 0.245 (6.2) 0.335 (8.51) 0.320 (8.12) 0.045 (1.14) 0.035 (0.89) 0.080 (2.03) 0.050 (1.27) 0.023 (0.58) 0.018 (0.46) 0.185 (4.69) 0.150 (3.81) 0.130 (3.3) 0.120 (3.05) 0.075 (1.90) 0.055 (1.39) 0.205 (5.2) 0.195 (5.0) Case Style DFM |
Numéro de pièce similaire - B40C800DM |
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