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BUK100-50DL Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUK100-50DL Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 10 page Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Continuous drain source voltage 1 - - 50 V V IS Continuous input voltage - 0 6 V I D Continuous drain current T mb ≤ 25 ˚C; VIS = 5 V - 13.5 A I D Continuous drain current T mb ≤ 100 ˚C; VIS = 5 V - 8.5 A I DRM Repetitive peak on-state drain current T mb ≤ 25 ˚C; VIS = 5 V - 54 A P D Total power dissipation T mb ≤ 25 ˚C - 40 W T stg Storage temperature - -55 150 ˚C T j Continuous junction temperature 2 normal operation - 150 ˚C T sold Lead temperature during soldering - 250 ˚C OVERLOAD PROTECTION LIMITING VALUES With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V ISP Protection supply voltage 3 for valid protection 4 - V Over temperature protection V DDP(T) Protected drain source supply voltage V IS = 5 V - 50 V Short circuit load protection 4 V DDP(P) Protected drain source supply voltage 5 V IS = 5 V - 24 V P DSM Instantaneous overload dissipation T mb = 25 ˚C - 0.6 kW OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I DROM Repetitive peak clamping current V IS = 0 V - 15 A E DSM Non-repetitive clamping energy T mb ≤ 25 ˚C; IDM = 15 A; - 200 mJ V DD ≤ 20 V; inductive load E DRM Repetitive clamping energy T mb ≤ 95 ˚C; IDM = 8 A; - 20 mJ V DD ≤ 20 V; f = 250 Hz ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k Ω 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The input voltage for which the overload protection circuits are functional. 4 For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. 5 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for P DSM, which is always the case when VDS is less than VDDP(P) maximum. November 1996 2 Rev 1.200 |
Numéro de pièce similaire - BUK100-50DL |
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Description similaire - BUK100-50DL |
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