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BUJ303AX Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BUJ303AX
Description  Silicon Diffused Power Transistor
Download  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUJ303AX Fiches technique(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BUJ303AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
CBO
Collector cut-off current
1
V
CBO = VCESMmax (1000V)
-
-
0.1
mA
I
CEO
V
CEO = VCEOMmax (500V)
-
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
-
0.1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
500
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltages I
C = 3 A; IB = 0.6 A
-
0.25
1.5
V
V
BEsat
Base-emitter saturation voltage
I
C = 3 A; IB = 0.6 A
-
0.97
1.3
V
h
FE
DC current gain
I
C = 5 mA; VCE = 5 V
10
22
35
h
FE
I
C = 500 mA; VCE = 5 V
14
25
35
h
FEsat
DC current gain
I
C = 2.5 A; VCE = 5 V
10
13.5
17
I
C = 3 A; VCE = 5 V
-
12
-
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 2.5 A; IBon = -IBoff = 0.5 A;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.5
0.7
µs
t
s
Turn-off storage time
3.3
4
µs
t
f
Turn-off fall time
0.33
0.45
µs
Switching times (inductive load)
I
Con = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-V
BB = 5 V
t
s
Turn-off storage time
1.4
1.6
µs
t
f
Turn-off fall time
145
160
ns
Switching times (inductive load)
I
Con = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-V
BB = 5 V; Tj = 100 ˚C
t
s
Turn-off storage time
1.7
1.9
µs
t
f
Turn-off fall time
160
200
ns
1 Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000


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