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BUJ303AX Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUJ303AX Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree C isol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 1 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I CBO Collector cut-off current 1 V CBO = VCESMmax (1000V) - - 0.1 mA I CEO V CEO = VCEOMmax (500V) - - 0.1 mA I EBO Emitter cut-off current V EB = 9 V; IC = 0 A - - 0.1 mA V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 500 - - V L = 25 mH V CEsat Collector-emitter saturation voltages I C = 3 A; IB = 0.6 A - 0.25 1.5 V V BEsat Base-emitter saturation voltage I C = 3 A; IB = 0.6 A - 0.97 1.3 V h FE DC current gain I C = 5 mA; VCE = 5 V 10 22 35 h FE I C = 500 mA; VCE = 5 V 14 25 35 h FEsat DC current gain I C = 2.5 A; VCE = 5 V 10 13.5 17 I C = 3 A; VCE = 5 V - 12 - DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) I Con = 2.5 A; IBon = -IBoff = 0.5 A; R L = 75 ohms; VBB2 = 4 V; t on Turn-on time 0.5 0.7 µs t s Turn-off storage time 3.3 4 µs t f Turn-off fall time 0.33 0.45 µs Switching times (inductive load) I Con = 2.5 A; IBon = 0.5 A; LB = 1 µH; -V BB = 5 V t s Turn-off storage time 1.4 1.6 µs t f Turn-off fall time 145 160 ns Switching times (inductive load) I Con = 2.5 A; IBon = 0.5 A; LB = 1 µH; -V BB = 5 V; Tj = 100 ˚C t s Turn-off storage time 1.7 1.9 µs t f Turn-off fall time 160 200 ns 1 Measured with half sine-wave voltage (curve tracer). August 1998 2 Rev 1.000 |
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