Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BUJ302A

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

systems, etc.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1000

V

V

CBO

Collector-Base voltage (open emitter)

-

1000

V

V

CEO

Collector-emitter voltage (open base)

-

500

V

I

C

Collector current (DC)

-

2

A

I

CM

Collector current peak value

-

3

A

P

tot

Total power dissipation

T

-

50

W

V

CEsat

Collector-emitter saturation voltage

I

-

1.0

V

t

f

Fall time

Ic=1A,I

145

160

ns

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

tab

collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector to emitter voltage

V

-

1000

V

V

CEO

Collector to emitter voltage (open base)

-

500

V

V

CBO

Collector to base voltage (open emitter)

-

1000

V

I

C

Collector current (DC)

-

2

A

I

CM

Collector current peak value

-

3

A

I

B

Base current (DC)

-

0.75

A

I

BM

Base current peak value

-

1

A

P

tot

Total power dissipation

T

-

50

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Junction to mounting base

-

2.5

K/W

R

th j-a

Junction to ambient

in free air

70

-

K/W

12 3

tab

b

c

e

August 1998

1

Rev 1.000