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BUJ302 Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BUJ302 Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 4 page Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1000 V V CBO Collector-Base voltage (open emitter) - 1000 V V CEO Collector-emitter voltage (open base) - 500 V I C Collector current (DC) - 2 A I CM Collector current peak value - 3 A P tot Total power dissipation T mb ≤ 25 ˚C - 50 W V CEsat Collector-emitter saturation voltage I C = 1.0 A;IB = 0.2 A - 1.0 V t f Fall time Ic=1A,I B1=0.2A 145 160 ns PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector to emitter voltage V BE = 0 V - 1000 V V CEO Collector to emitter voltage (open base) - 500 V V CBO Collector to base voltage (open emitter) - 1000 V I C Collector current (DC) - 2 A I CM Collector current peak value - 3 A I B Base current (DC) - 0.75 A I BM Base current peak value - 1 A P tot Total power dissipation T mb ≤ 25 ˚C - 50 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - 2.5 K/W R th j-a Junction to ambient in free air 70 - K/W 12 3 tab b c e August 1998 1 Rev 1.000 |
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Description similaire - BUJ302 |
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