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IRF7101 Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7101
Description  HEXFET Power MOSFET
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7101 Fiches technique(HTML) 1 Page - International Rectifier

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Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
„
–––
–––
62.5
°C/W
HEXFET® Power MOSFET
PD - 9.871B
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications.
With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7101
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top V iew
8
1
2
3
4
5
6
7
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
3.5
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
2.3
IDM
Pulsed Drain Current

14
PD @TC = 25°C
Power Dissipation
2.0
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt
‚
3.0
V/nS
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
Sodering Temperature, for 10 seconds
300(1.6mm from case)
Absolute Maximum Ratings
A
VDSS = 20V
RDS(on) = 0.10Ω
ID = 3.5A
8/25/97
Thermal Resistance Ratings
W
°C


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