BU4550AL datasheet(2/4 Pages) PHILIPS

No de pièce	BU4550AL

Description	Silicon Diffused Power Transistor

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BU4550AL

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

BE = 0 V; VCE = VCESMmax

-

1.0

mA

I

CES

V

BE = 0 V; VCE = VCESMmax;

-

2.0

mA

T

j = 125 ˚C

I

EBO

Emitter cut-off current

V

EB = 7.5 V; IC = 0 A

-

1.0

mA

BV

EBO

Base-emitter breakdown voltage

I

B = 1 mA

7.5

14

-

V

CEsat

Collector-emitter saturation voltage

I

C = 20 A; IB = 5 A

-

3.0

V

BEsat

Base-emitter saturation voltage

I

C = 20 A; IB = 5 A

t.b.f

-

1.0

V

h

FE

DC current gain

I

C = 1A; VCE = 5 V

-

t.b.f

-

h

FE

I

C = 20 A; VCE = 5 V

4.2

5.35

6.5

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (32 kHz line

I

Csat = 20 A;IB1 = 4 A; (IB2 = -10A)

deflection dynamic test circuit).

t

s

Turn-off storage time

t.b.f

µs

t

f

Turn-off fall time

t.b.f

µs

Switching times (130 kHz line

I

Csat = 8 A;IB1 = 1.6 A; (IB2 = -4.8A)

deflection dynamic test circuit).

t

s

Turn-off storage time

t.b.f

µs

t

f

Turn-off fall time

t.b.f

µs

2 Measured with half sine-wave voltage (curve tracer).

January 1998

2

Rev 1.000

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