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BU4550AL Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BU4550AL Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 4 page Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4550AL STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - - 1.0 mA BV EBO Base-emitter breakdown voltage I B = 1 mA 7.5 14 - V V CEsat Collector-emitter saturation voltage I C = 20 A; IB = 5 A - - 3.0 V V BEsat Base-emitter saturation voltage I C = 20 A; IB = 5 A t.b.f - 1.0 V h FE DC current gain I C = 1A; VCE = 5 V - t.b.f - h FE I C = 20 A; VCE = 5 V 4.2 5.35 6.5 DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (32 kHz line I Csat = 20 A;IB1 = 4 A; (IB2 = -10A) deflection dynamic test circuit). t s Turn-off storage time t.b.f t.b.f µs t f Turn-off fall time t.b.f t.b.f µs Switching times (130 kHz line I Csat = 8 A;IB1 = 1.6 A; (IB2 = -4.8A) deflection dynamic test circuit). t s Turn-off storage time t.b.f t.b.f µs t f Turn-off fall time t.b.f t.b.f µs 2 Measured with half sine-wave voltage (curve tracer). January 1998 2 Rev 1.000 |
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