Fabricant | No de pièce | Fiches technique | Description |
Toshiba Semiconductor |
TC58256FT
|
1Mb / 33P |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
TC58256AFT
|
345Kb / 33P |
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TC5816BFT
|
1Mb / 36P |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM
|
TC58V64ADC
|
1,002Kb / 33P |
64-MBIT (8M X 8BITS) CMOS NAND E PROM (8M BYTE SmartMedia)
|
TC58NS256DC
|
709Kb / 33P |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 짰8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TC5832DC
|
1Mb / 38P |
32 MBIT (4M x 8BIT) CMOS NAND E2PROM
|
Sanyo Semicon Device |
LE25FV051T
|
152Kb / 11P |
512k (64k word x 8bits) Serial flash EEPROM
|
Toshiba Semiconductor |
TC5832FT
|
1Mb / 38P |
32 MBIT (4M X 8 BITS) CMOS NAND E2PROM
|
ON Semiconductor |
CAT28C257
|
143Kb / 13P |
256 kb CMOS Parallel EEPROM
December, 2009 ??Rev. 6 |
Toshiba Semiconductor |
TC581282AXB
|
507Kb / 31P |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
|