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BU2520AW Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BU2520AW Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - - 1.0 mA BV EBO Emitter-base breakdown voltage I B = 1 mA 7.5 13.5 - V V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 800 - - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 6.0 A; IB = 1.2 A - - 5.0 V V BEsat Base-emitter saturation voltage I C = 6.0 A; IB = 1.2 A - - 1.1 V h FE DC current gain I C = 100 mA; VCE = 5 V - 13 - h FE I C = 6 A; VCE = 5 V 5 7 9.5 DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collector capacitance I E = 0 A; VCB = 10 V; f = 1 MHz 115 - pF Switching times (32 kHz line I Csat = 6.0 A; LC = 330 µH; Cfb = 9 nF; deflection circuit) I B(end) = 0.85 A; LB = 3.45 µH; -V BB = 4 V; (-dIB/dt = 1.2 A/µs) t s Turn-off storage time 3.0 4.0 µs t f Turn-off fall time 0.2 0.35 µs Switching times (16 kHz line I Csat = 6.0 A; LC = 650 µH; Cfb = 19 nF; deflection circuit) I B(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V; (-dI B/dt = 0.8 A / µs) t s Turn-off storage time 4.5 5.5 µs t f Turn-off fall time 0.35 0.5 µs 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 |
Numéro de pièce similaire - BU2520AW |
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Description similaire - BU2520AW |
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