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BU2508AF Fiches technique(PDF) 5 Page - NXP Semiconductors |
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BU2508AF Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AF Fig.13. Forward bias safe operating area. T hs = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. Fig.14. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Ths) Fig.15. Forward bias safe operating area. T hs = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope. 1 10 100 1000 100 10 1 0.1 0.01 tp = 10 us 100 us 1 ms 10 ms DC IC / A VCE / V ICM max IC max = 0.01 II I Ptot max 1 10 100 1000 100 10 1 0.1 0.01 tp = 10 us 100 us 1 ms 10 ms DC IC / A VCE / V ICM max IC max = 0.01 II I Ptot max 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound September 1997 5 Rev 1.500 |
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