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BU2506DX Fiches technique(PDF) 5 Page - NXP Semiconductors |
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BU2506DX Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DX Fig.12. Forward bias safe operating area. T hs = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. Fig.13. Forward bias safe operating area. T hs = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope. 1 100 100 10 1 0.1 0.01 10 1000 I tp = 10 us 100 us 1 ms 10 ms DC IC / A VCE / V ICM max IC max Ptot max = 0.01 II 1 100 100 10 1 0.1 0.01 10 1000 I tp = 10 us 100 us 1 ms 10 ms DC IC / A VCE / V ICM max IC max II = 0.01 Ptot max September 1997 5 Rev 2.400 |
Numéro de pièce similaire - BU2506DX |
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Description similaire - BU2506DX |
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