Moteur de recherche de fiches techniques de composants électroniques |
|
BU1507DX Fiches technique(PDF) 1 Page - NXP Semiconductors |
|
BU1507DX Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 700 V I C Collector current (DC) - 8 A I CM Collector current peak value - 15 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W V CEsat Collector-emitter saturation voltage I C = 4 A; IB = 0.8 A - 5.0 V I Csat Collector saturation current f = 16kHz 4 - A V F Diode forward voltage I F = 4 A 1.7 2.0 V t f Fall time I Csat = 4 A; f = 16kHz 0.25 0.5 µs PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 700 V I C Collector current (DC) - 8 A I CM Collector current peak value - 15 A I B Base current (DC) - 4 A I BM Base current peak value - 6 A -I B(AV) Reverse base current average over any 20 ms period - 100 mA -I BM Reverse base current peak value 1 -5 A P tot Total power dissipation T hs ≤ 25 ˚C - 35 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink with heatsink compound - 3.7 K/W R th j-a Junction to ambient in free air 55 - K/W 12 3 case b c e Rbe 1 Turn-off current. September 1997 1 Rev 1.200 |
Numéro de pièce similaire - BU1507DX |
|
Description similaire - BU1507DX |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |