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BTA216X-600E Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BTA216X-600E Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 5 page Philips Semiconductors Objective specification Three quadrant triacs BTA216X series D, E and F guaranteed commutation DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA216X- ...D ...E ...F dV D/dt Critical rate of rise of V DM = 67% VDRM(max);30 60 70 - - V/ µs off-state voltage T j = 110 ˚C; exponential waveform; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - - A/ms commutating current I T(RMS) = 16 A; dV com/dt = 20v/µs; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 110 ˚C; 4.3 5.3 6.3 - - A/ms commutating current I T(RMS) = 16 A; dV com/dt = 0.1v/µs; gate open circuit t gt Gate controlled turn-on I TM = 20 A; VD = VDRM(max);- - - 2 - µs time I G = 0.1 A; dIG/dt = 5 A/µs October 1999 3 Rev 1.000 |
Numéro de pièce similaire - BTA216X-600E |
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Description similaire - BTA216X-600E |
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