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KM641001BL-20 Fiches technique(PDF) 4 Page - Samsung semiconductor

No de pièce KM641001BL-20
Description  256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
Download  9 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM641001BL-20 Fiches technique(HTML) 4 Page - Samsung semiconductor

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KM641001B/BL
CMOS SRAM
PRELIMINARY
Rev. 3.0
- 4 -
July 1998
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS(TA=0 to 70
°C, VCC=5.0V±10%, unless otherwise noted.)
READ CYCLE
Parameter
Symbol
KM641001B/BL-15
KM641001B/BL-20
Unit
Min
Max
Min
Max
Read Cycle Time
tRC
15
-
20
-
ns
Address Access Time
tAA
-
15
-
20
ns
Chip Select to Output
tCO
-
15
-
20
ns
Output Enable to Valid Output
tOE
-
8
-
10
ns
Chip Enable to Low-Z Output
tLZ
3
-
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
ns
Chip Disable to High-Z Output
tHZ
0
6
0
8
ns
Output Disable to High-Z Output
tOHZ
0
6
0
8
ns
Output Hold from Address Change
tOH
3
-
3
-
ns
Chip Selection to Power Up Time
tPU
0
-
0
-
ns
Chip Selection to Power DownTime
tPD
-
15
-
20
ns
Output Loads(A)
Output Loads(B)
DOUT
5pF*
480
255
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5.0V
DOUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance


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