KM641003A-12 datasheet(4/8 Pages) SAMSUNG

No de pièce	KM641003A-12

Description	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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KM641003A

CMOS SRAM

PRELIMINARY

Rev 4.0

- 4 -

February 1998

TEST CONDITIONS

Parameter

Value

Input Pulse Levels

0V to 3V

Input Rise and Fall Times

3ns

Input and Output timing Reference Levels

1.5V

Output Loads

See below

AC CHARACTERISTICS(TA=0 to 70

°C, VCC=5.0V±10%, unless otherwise noted.)

READ CYCLE

Parameter

Symbol

KM641003A-12

KM641003A-15

KM641003A-20

Unit

Min

Max

Min

Max

Min

Max

Read Cycle Time

tRC

12

-

15

-

20

-

ns

Address Access Time

tAA

-

12

-

15

-

20

ns

Chip Select to Output

tCO

-

12

-

15

-

20

ns

Output Enable to Valid Output

tOE

-

6

-

7

-

9

ns

Chip Enable to Low-Z Output

tLZ

3

-

3

-

3

-

ns

Output Enable to Low-Z Output

tOLZ

0

-

0

-

0

-

ns

Chip Disable to High-Z Output

tHZ

0

6

0

7

0

9

ns

Output Disable to High-Z Output

tOHZ

0

6

0

7

0

9

ns

Output Hold from Address Change

tOH

3

-

3

-

3

-

ns

Chip Selection to Power Up Time

tPU

0

-

0

-

0

-

ns

Chip Selection to Power DownTime

tPD

-

12

-

15

-

20

ns

Output Loads(A)

Output Loads(B)

DOUT

5pF*

480

Ω

255

Ω

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

+5.0V

DOUT

30pF*

480

Ω

255

Ω

+5.0V

* Including Scope and Jig Capacitance

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