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BTA216-500C Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BTA216-500C
Description  Three quadrant triacs high commutation
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BTA216-500C Fiches technique(HTML) 2 Page - NXP Semiconductors

  BTA216-500C Datasheet HTML 1Page - NXP Semiconductors BTA216-500C Datasheet HTML 2Page - NXP Semiconductors BTA216-500C Datasheet HTML 3Page - NXP Semiconductors BTA216-500C Datasheet HTML 4Page - NXP Semiconductors  
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Philips Semiconductors
Objective specification
Three quadrant triacs
BTA216 series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
1.2
K/W
junction to mounting base
half cycle
-
-
1.7
K/W
R
th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA216-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
-
5
10
25
mA
T2+ G-
-
-
5
10
25
mA
T2- G-
-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
-
15
20
25
mA
T2+ G-
-
-
25
30
40
mA
T2- G-
-
-
25
30
40
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
-
15
25
30
mA
V
T
On-state voltage
I
T = 20 A
-
1.2
1.5
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 ˚C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 ˚C
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA216-
...D
...E
...F
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);30
60
70
-
-
V/
µs
off-state voltage
T
j = 110 ˚C; exponential
waveform; gate open
circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 110 ˚C;
1.8
3.5
4.5
-
-
A/ms
commutating current
I
T(RMS) = 16 A;
dV
com/dt = 20v/µs; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 110 ˚C;
4.3
5.3
6.3
-
-
A/ms
commutating current
I
T(RMS) = 16 A;
dV
com/dt = 0.1v/µs; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 20 A; VD = VDRM(max);-
-
-
2
-
µs
time
I
G = 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1999
2
Rev 1.100


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