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BTA208X Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BTA208X Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 8 page October 1999 4 Rev 1.200 Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation BTA208X series D, E and F DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA208X- ...D ...E ...F dV D/dt Critical rate of rise of V DM = 67% VDRM(max);30 60 70 - V/ µs off-state voltage T j = 110 ˚C; exponential waveform; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - A/ms commutating current I T(RMS) = 8 A; dV com/dt = 20v/µs; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 110 ˚C; 3.5 4.5 5.5 - A/ms commutating current I T(RMS) = 8 A; dV com/dt = 0.1v/µs; gate open circuit t gt Gate controlled turn-on I TM = 12 A; VD = VDRM(max);- - - 2 - µs time I G = 0.1 A; dIG/dt = 5 A/µs |
Numéro de pièce similaire - BTA208X |
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Description similaire - BTA208X |
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