BTA151-800R datasheet(1/6 Pages) PHILIPS

No de pièce	BTA151-800R

Description	Thyristors sensitive gate

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Philips Semiconductors

Product specification

Thyristors

BTA151 series

sensitive gate

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated,

sensitive

gate

SYMBOL

PARAMETER

MAX.

MAX. UNIT

thyristors in

a

plastic

envelope,

intended for use in general purpose

BTA151-

500R

650R

800R

switching

and

phase

control

V

DRM,

Repetitive peak off-state

500

650

800

V

applications.

V

RRM

voltages

I

T(AV)

Average on-state current

7.5

A

I

T(RMS)

RMS on-state current

12

A

I

TSM

Non-repetitive peak on-state

100

A

current

PINNING - SOT82

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

cathode

2

anode

3

gate

tab

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500R -650R -800R

V

DRM, VRRM

Repetitive peak off-state

-

500

1

650

1

800

V

voltages

I

T(AV)

Average on-state current

half sine wave; T

mb ≤ 109 ˚C

-

7.5

A

I

T(RMS)

RMS on-state current

all conduction angles

-

12

A

I

TSM

Non-repetitive peak

half sine wave; T

j = 25 ˚C prior to

on-state current

surge

t = 10 ms

-

100

A

t = 8.3 ms

-

110

A

I

2tI2t for fusing

t = 10 ms

-

50

A

2s

dI

T/dt

Repetitive rate of rise of

I

TM = 20 A; IG = 50 mA;

-

50

A/

µs

on-state current after

dI

G/dt = 50 mA/µs

triggering

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

RGM

Peak reverse gate voltage

-

12

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms period

-

0.5

W

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

ak

g

1

23

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/

µs.

September 1997

1

Rev 1.200

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