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LM3503SQX-16 Fiches technique(PDF) 6 Page - National Semiconductor (TI) |
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LM3503SQX-16 Fiches technique(HTML) 6 Page - National Semiconductor (TI) |
6 / 20 page Electrical Characteristics (Notes 6, 7) Limits in standard typeface are for T J = +25˚C. Limits in bold typeface apply over the full operating junction temperature range (−40˚C ≤ T J ≤ +125˚C). Unless otherwise specified,V IN = 2.5V. (Continued) Symbol Parameter Conditions Min Typ Max Units I VOUT1(ON) V OUT1 Pin Bias Current (Note 3) V OUT1 = 14V, En1 = En1 = 1.5V (16) V OUT1 = 23V, En1 = En2 = 1.5V (25) V OUT1 = 32V, En1 = En2 = 1.5V (35) V OUT1 = 42V, En1 = En2 = 1.5V (44) 40 50 50 85 80 100 100 140 µA I VOUT2 V OUT2Pin Leakage Current (Note 3) Fb = En1 = En2 = 0V, V OUT2 =VOUT1 = 42V 0.1 3 µA UVP Under-Voltage Protection On Threshold Off Threshold 2.2 2.4 2.3 2.5 V OVP Over-Voltage Protection (Note 5) On Threshold (16) Off Threshold (16) On Threshold (25) Off Threshold (25) On Threshold (35) Off Threshold (35) On Threshold (44) Off Threshold (44) 14.5 14.0 22.5 21.5 32.0 31.0 40.5 39.0 15.5 15 24 23 34 33 42 41 16.5 16.0 25.5 24.5 35.0 34.0 43.5 42.0 V V En1 PMOS FET Switch and Device Enabling Threshold (Figure 1: P1) Off Threshold 0.8 0.3 V On Threshold 1.4 0.8 V En2 NMOS FET Switch and Device Enabling Threshold (Figure 1: N2) Off Threshold 0.8 0.3 V On Threshold 1.4 0.8 I En1 En1 Pin Bias Current (Note 3) En1 = 2.5V En1=0V 7 0.1 14 µA I En2 En2 Pin Bias Current (Note 3) En2 = 2.5V En2=0V 7 0.1 14 µA Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical characteristic specifications do not apply when operating the device outside of its rated operating conditions. Note 2: The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. The machine model is a 200 pF capacitor discharged directly into each pin. Note 3: Current flows into the pin. Note 4: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. See Thermal Properties for the thermal resistance. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(MAX) =(TJ(MAX)–TA)/ θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature. For more information on this topic, please refer to Application Note 1187(An1187): Leadless Leadframe Package (LLP) and Application Note 1112(AN1112) for microSMD chip scale package. Note 5: The on threshold indicates that the LM3503 is no longer switching or regulating LED current, while the off threshold indicates normal operation. Note 6: All voltages are with respect to the potential at the GND pin. Note 7: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Note 8: NMOS Power On Resistance measured at ISW= 250mA for sixteen voltage version. www.national.com 6 |
Numéro de pièce similaire - LM3503SQX-16 |
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Description similaire - LM3503SQX-16 |
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