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KM62V256DLE-L Fiches technique(PDF) 1 Page - Samsung semiconductor |
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KM62V256DLE-L Fiches technique(HTML) 1 Page - Samsung semiconductor |
1 / 9 page KM62V256D, KM62U256D Family CMOS SRAM Revision 1.0 November 1997 1 Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 1.0 Remark Preliminary Final History Initial draft Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA →ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10 µA→5µA Extended and Industrial part : 20 µA→5µA - Improved VIL(Min.) : 0.4V →0.6V - Improved power dissipation : 0.7W →1W Draft Data April 1, 1997 November 12, 1997 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. |
Numéro de pièce similaire - KM62V256DLE-L |
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Description similaire - KM62V256DLE-L |
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