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AD8118ABPZ Fiches technique(PDF) 7 Page - Analog Devices |
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AD8118ABPZ Fiches technique(HTML) 7 Page - Analog Devices |
7 / 32 page Preliminary Technical Data AD8117/AD8118 Rev. PrA | Page 7 of 32 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Analog Supply Voltage (VPOS – VNEG) +6 V Digital Supply Voltage (VDD – DGND) +6 V Ground potential difference (VNEG – DGND) +0.5 V to –2.5 V Maximum potential difference (VDD – VNEG) +6 V Common-Mode Analog Input Voltage (VNEG – 0.5 V) to (VPOS + 0.5 V) Differential Analog Input Voltage ± 2 V Digital Input Voltage VDD Output Voltage (Disabled Analog Output) (VPOS – 1 V) to (VNEG + 1 V) Output Short-Circuit Duration Momentary Storage Temperature −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature Range (Soldering 10 sec) 300°C Junction Temperature 150°C NOTE Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 5. Thermal Resistance Package Type θθθθJA θθθθJC Unit BGA 15 °C/W POWER DISSIPATION The AD8117/AD8118 are operated with ±2.5 V or +5 V supplies and can drive loads down to 100 , resulting in a large range of possible power dissipations. For this reason, extra care must be taken derating the operating conditions based on ambient temperature. Packaged in a 308-lead BGA, the AD8117/AD8118 junction- to-ambient thermal impedance ( θJA) is 15°C/W. For long-term reliability, the maximum allowed junction temperature of the die should not exceed 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. The following curve shows the range of allowed internal die power dissipations that meet these conditions over the −40°C to +85°C ambient temperature range. When using the table, do not include external load power in the Maximum Power calculation, but do include load current dropped on the die output transistors. 8.0 7.0 4.0 6.0 5.0 85 75 AMBIENT TEMPERATURE – C T J = 150 C 65 55 45 35 25 15 Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
Numéro de pièce similaire - AD8118ABPZ |
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Description similaire - AD8118ABPZ |
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