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AD8118ABPZ Fiches technique(PDF) 7 Page - Analog Devices

No de pièce AD8118ABPZ
Description  Video Crosspoint Switch Video Crosspoint Switch
Download  32 Pages
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
Logo AD - Analog Devices

AD8118ABPZ Fiches technique(HTML) 7 Page - Analog Devices

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Preliminary Technical Data
AD8117/AD8118
Rev. PrA | Page 7 of 32
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Analog Supply Voltage (VPOS – VNEG)
+6 V
Digital Supply Voltage (VDD – DGND)
+6 V
Ground potential difference (VNEG
DGND)
+0.5 V to –2.5 V
Maximum potential difference
(VDD – VNEG)
+6 V
Common-Mode Analog Input
Voltage
(VNEG – 0.5 V) to (VPOS +
0.5 V)
Differential Analog Input Voltage
±
2 V
Digital Input Voltage
VDD
Output Voltage (Disabled Analog
Output)
(VPOS – 1 V) to (VNEG + 1 V)
Output Short-Circuit Duration
Momentary
Storage Temperature
−65°C to +125°C
Operating Temperature Range
−40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Junction Temperature
150°C
NOTE
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 5. Thermal Resistance
Package Type
θθθθJA
θθθθJC
Unit
BGA
15
°C/W
POWER DISSIPATION
The AD8117/AD8118 are operated with ±2.5 V or +5 V
supplies and can drive loads down to 100
, resulting in a large
range of possible power dissipations. For this reason, extra
care must be taken derating the operating conditions based on
ambient temperature.
Packaged in a 308-lead BGA, the AD8117/AD8118 junction-
to-ambient thermal impedance (
θJA) is 15°C/W. For long-term
reliability, the maximum allowed junction temperature of the
die should not exceed 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
stresses exerted on the die by the package. Exceeding a junction
temperature of 175°C for an extended period can result in
device failure. The following curve shows the range of allowed
internal die power dissipations that meet these conditions over
the −40°C to +85°C ambient temperature range. When using
the table, do not include external load power in the Maximum
Power calculation, but do include load current dropped on the
die output transistors.
8.0
7.0
4.0
6.0
5.0
85
75
AMBIENT TEMPERATURE – C
T
J = 150 C
65
55
45
35
25
15
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.


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