Moteur de recherche de fiches techniques de composants électroniques |
|
PH5525L Fiches technique(PDF) 1 Page - NXP Semiconductors |
|
PH5525L Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 12 page 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information PH5525L N-channel TrenchMOS logic level FET Rev. 02 — 5 December 2006 Product data sheet I Logic level threshold I Lead-free package I Optimized for use in DC-to-DC converters I Very low switching and conduction losses I 100 % RG tested I DC-to-DC converters I Switched-mode power supplies I Voltage regulators I PC Motherboards I VDS ≤ 25 V I ID ≤ 81.7 A I RDSon ≤ 5.5 mΩ I QGD = 3.3 nC (typ) Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) SOT669 (LFPAK) 4 gate (G) mb mounting base; connected to drain (D) mb 1234 S D G mbb076 |
Numéro de pièce similaire - PH5525L |
|
Description similaire - PH5525L |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |