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NUS1204MN Fiches technique(PDF) 4 Page - ON Semiconductor |
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NUS1204MN Fiches technique(HTML) 4 Page - ON Semiconductor |
4 / 5 page NUS1204MN http://onsemi.com 4 P−CHANNEL MOSFET (TA= 25°C, unless otherwise specified) Parameter Symbol Min Typ Max Units Drain to Source On Resistance VGS = −4.5 V, ID = 600 mA VGS = −4.5 V, ID = 1.0 A RDS(on) 75 75 100 100 m W Zero Gate Voltage Drain Current VGS = −4.5 V, VGS = 0 V, VDS = −10 V IDSS −1.0 mA Turn On Delay (Note 4) VGS = −4.5 V ton 5.5 ns Turn Off Delay (Note 4) VGS = −4.5 V toff 20 ns Input Capacitance VGS = 0 V, f = 1.0 MHz, VDS = −10 V Cin 531 pF Gate to Source Leakage Current VGS = 8.0 V, VDS = 0 V IGSS ±10 nA Drain to Source Breakdown Voltage VGS = 0 V, ID = −250 mA V(BR)DSS −12 V Gate Threshold Voltage VGS = VDS, ID = −250 mA V(GS)th −0.4 −0.7 −1.0 V 4. Switching characteristics are independent of operating junction temperature. |
Numéro de pièce similaire - NUS1204MN |
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Description similaire - NUS1204MN |
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