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NST489AMT1 Fiches technique(PDF) 2 Page - ON Semiconductor |
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NST489AMT1 Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 4 page NST489AMT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 30 − − V Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 50 − − V Emitter − Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 30 V, IE = 0) ICBO − − 0.1 mA Collector−Emitter Cutoff Current (VCES = 30 V) ICES − − 0.1 mA Emitter Cutoff Current (VEB = 4.0 V) IEBO − − 0.1 mA ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 1.0 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) hFE 300 300 200 − 500 − − 900 − Collector − Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) VCE(sat) − − − 0.10 0.06 0.05 0.200 0.125 0.075 V Base − Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A) VBE(sat) − − 1.1 V Base − Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) − − 1.1 V Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz fT 200 300 − MHz Output Capacitance (f = 1.0 MHz) Cobo − − 15 pF 4. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. Figure 1. VCE (sat) versus Ib 0.001 0.2 0.01 0.1 1.0 0 0.1 Ib (A) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Figure 2. VCE (sat) versus Ic 0.001 2 0.01 0.1 1.0 0 0.1 Ic (A) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 IC = 2 A IC = 1 A IC = 500 mA IC = 100 mA Ic/Ib = 100 Ic/Ib = 10 Figure 3. hFE versus Ic Figure 4. VBE(on) versus Ic 0.001 2 0.01 0.1 1.2 0 Ic (A) 0.2 0.4 0.6 0.8 1 1.0 +125 °C +25 °C −55 °C VCE = 5 V 0.001 2 0.01 0.1 800 0 100 Ic (A) 200 300 400 500 600 700 1 +125 °C +25 °C −55 °C VCE = 5 V |
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