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NCP1573 Fiches technique(PDF) 3 Page - ON Semiconductor |
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NCP1573 Fiches technique(HTML) 3 Page - ON Semiconductor |
3 / 17 page NCP1573 http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (0°C < TJ < 125°C, 11.4 V < VCC < 12.6 V, CGATE(H) = CGATE(L) = 3.3 nF, CPGDELAY = 0.01 μF, CCOMP = 0.1 μF; unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Error Amplifier VFB Bias Current VFB = 0 V − 0.2 2.0 μA COMP Source Current COMP = 1.5 V, VFB = 0.8 V 15 30 60 μA COMP Sink Current COMP = 1.5 V, VFB = 1.2 V 15 30 60 μA Reference Voltage COMP = VFB TJ < 25°C 0.970 0.965 0.980 0.980 0.990 0.995 V V COMP Max Voltage VFB = 0.8 V 2.4 2.7 − V COMP Min Voltage VFB = 1.2 V − 0.1 0.2 V Open Loop Gain − − 98 − dB Unity Gain Bandwidth − − 20 − kHz PSRR @ 1.0 kHz − − 70 − dB Output Transconductance − − 32 − mmho Output Impedance − − 2.5 − MΩ GATE(H) and GATE(L) Rise Time 1.0 V < GATE(L), GATE(H) < VCC − 2.0 V − 40 80 ns Fall Time VCC − 2.0 V < GATE(L), GATE(H) < 1.0 V − 40 80 ns GATE(H) to GATE(L) Delay GATE(H) < 2.0 V, GATE(L) > 2.0 V 40 60 100 ns GATE(L) to GATE(H) Delay GATE(L) < 2.0 V, GATE(H) > 2.0 V 40 60 100 ns Minimum Pulse Width GATE(X) = 4.0 V − 250 − ns High Voltage (AC) Measure GATE(L) or GATE(H) 0.5 nF < CGATE(H) = CGATE(L) < 10 nF Note 2. VCC − 0.5 VCC − V Low Voltage (AC) Measure GATE(L) or GATE(H) 0.5 nF < CGATE(H) = CGATE(L) < 10 nF Note 2. − 0 0.5 V GATE(H)/(L) Pull−Down Resistance to GND. Note 2. 20 50 115 kΩ Power Good Lower Threshold, VO Rising TJ < 25°C 0.852 0.847 0.882 0.882 0.912 0.917 V V Lower Threshold, VO Falling TJ < 25°C 0.663 0.658 0.685 0.685 0.709 0.714 V V PWRGD Low Voltage ISINK = 1.0 mA, VFB = 0 V − 0.15 0.4 V Delay Charge Current PGDELAY = 2.0 V 7.0 12 18 μA Delay Clamp Voltage − 3.45 4.0 4.3 V Delay Charge Threshold Ramp PGDELAY, Monitor PWRGD 3.1 3.3 3.5 V “Good” Signal Delay With 0.01 μF. Note 2. 1.0 3.0 5.0 ms 2. Guaranteed by design. Not tested in production. |
Numéro de pièce similaire - NCP1573 |
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Description similaire - NCP1573 |
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