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IRF6628TRPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF6628TRPBF
Description  DirectFET Power MOSFET
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF6628TRPBF Fiches technique(HTML) 1 Page - International Rectifier

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www.irf.com
1
07/11/06
IRF6628PbF
IRF6628TRPbF
DirectFET
™ Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.16mH, RG = 25Ω, IAS = 22A.
Notes:
DirectFET
™ ISOMETRIC
PD - 97234
SQ
SX
ST
MQ
MX
MT
MP
0
10203040
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 22A
MX
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.9m
Ω@ 10V 2.5mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
31nC
12nC
4.1nC
26nC
21nC
1.9V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
22
Max.
22
160
220
±20
25
27
38
l RoHs Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

3
4
5
6
7
8
9
10
11
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
ID = 27A
TJ = 25°C
TJ = 125°C
Description
The IRF6628PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6628PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6628PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6628PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.


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