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TC25SPD Fiches technique(PDF) 8 Page - Texas Instruments |
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TC25SPD Fiches technique(HTML) 8 Page - Texas Instruments |
8 / 19 page TC253SPD 680×500 PIXEL CCD IMAGE SENSOR SOCS062B – JANUARY 2001 – REVISED MAY 2002 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 advanced lateral overflow drain The advanced lateral overflow drain structure is shared by two neighboring pixels in each line. Varying the dc bias of the antiblooming drain can control the blooming protection level and trade it for well capacity. Applying a pulse (approximately 10 V above the nominal level for a minimum of 1 µs) to the drain removes all charge from the pixels. This feature permits a precise control of the integration time on a frame-by-frame basis. The single-pulse clearing capability also reduces smear by eliminating accumulated charge in the pixels before the start of the integration period (single-sided smear). The application of a negative 1-V pulse to the antiblooming drain during the parallel transfer is recommended. This pulse prevents creation of undesirable artifacts caused by the on-chip crosstalk between the image area gate clock lines and the antiblooming drain bias lines. serial register and charge multiplier The serial register is used to transport charge stored in the pixels of the memory to the output amplifier. However, the TC253SPD device has a serial register with twice the standard length. The first half has a conventional design that interfaces with the memory and the clearing drain as it would in any other CCD sensor (for example the TC237 sensor). The second half, however, is unique and includes 400 charge multiplication stages with a number of dummy pixels that are needed to transport charge between the active register blocks and the output amplifier. Charge is multiplied as it progresses from stage to stage in the multiplier toward the charge detection node. The charge multiplication level depends on the amplitude of multiplication pulses (approximately 11 V ~ 17 V) applied to the multiplication gates. Due to the double length of the registers, the first line in the field or frame scan does not contain valid data and must be discarded. readout and video processing The last element of the charge readout and detection chain is the charge detection node. Charge detection nodes use standard floating diffusion (FD) concepts followed by dual-stage source followers as buffer amplifiers. The reset gate is internally connected to SRG1. This connection results in a simultaneous FD reset when the SRG1 gate is clocked high. To achieve the ultimate sensor performance, it is necessary to eliminate the detection node kTC noise using CDS processing techniques. The IMPACTRON t devices can detect single photons when cooling or when sufficiently short integration times are used. |
Numéro de pièce similaire - TC25SPD |
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Description similaire - TC25SPD |
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