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SI3812DV Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI3812DV
Description  N-Channel 20-V (D-S) MOSFET With Schottky Diode
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3812DV Fiches technique(HTML) 2 Page - Vishay Siliconix

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Si3812DV
Vishay Siliconix
www.vishay.com
2
Document Number: 71069
S-03510—Rev. D, 16-Apr-01
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
MOSFET
93
110
Junction-to-Ambienta
t
v 5 sec
Schottky
103
125
MOSFET
RthJA
130
150
_
Junction-to-Ambienta
Steady State
Schottky
140
165
_C/W
MOSFET
75
90
Junction-to-Foot (MOSFET Drain, Schottky Kathode)
Steady State
Schottky
RthJF
80
95
Notes
a.
Surface Mounted on 1” x1” FR4 Board.
MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.6
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"100
nA
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
m
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
IDSS
VDS = 16 V, VGS = 0 V, TJ = 85_C
10
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 4.5 V
5
A
VGS = 4.5 V, ID = 2.4 A
0.100
0.125
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 1.0 A
0.160
0.200
W
Forward Transconductancea
gfs
VDS = 5 V, ID = 2.4 A
5
S
Schottky Diode Forward Voltagea
VSD
IS = 1.5 A, VGS = 0 V
0.79
1.1
V
Dynamicb
Total Gate Charge
Qg
2.1
4.0
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 2.4 A
0.3
nC
Gate-Drain Charge
Qgd
0.4
Turn-On Delay Time
td(on)
10
17
Rise Time
tr
VDD = 10 V, RL = 10 W
30
50
Turn-Off Delay Time
td(off)
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
14
25
ns
Fall Time
tf
6
12
Source-Drain Reverse Recovery Time
trr
IF = 3.0 A, di/dt = 100 A/ms
30
50
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
IF = 0.5
0.42
0.48
Forward Voltage Drop
VF
IF = 0.5, TJ = 125_C
0.33
0.4
V
Vr = 20
0.002
0.100
Maximum Reverse Leakage Current
Irm
Vr = 20, TJ = 75_C
0.06
1
mA
rm
Vr = 20, TJ = 125_C
1.5
10
Junction Capacitance
CT
Vr = 10 V
31
pF


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