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SI3812DV Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI3812DV Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si3812DV Vishay Siliconix www.vishay.com 2 Document Number: 71069 S-03510—Rev. D, 16-Apr-01 THERMAL RESISTANCE RATINGS Parameter Device Symbol Typical Maximum Unit MOSFET 93 110 Junction-to-Ambienta t v 5 sec Schottky 103 125 MOSFET RthJA 130 150 _ Junction-to-Ambienta Steady State Schottky 140 165 _C/W MOSFET 75 90 Junction-to-Foot (MOSFET Drain, Schottky Kathode) Steady State Schottky RthJF 80 95 Notes a. Surface Mounted on 1” x1” FR4 Board. MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 m Zero Gate Voltage Drain Current (MOSFET + Schottky) IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C 10 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 4.5 V 5 A VGS = 4.5 V, ID = 2.4 A 0.100 0.125 W Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 1.0 A 0.160 0.200 W Forward Transconductancea gfs VDS = 5 V, ID = 2.4 A 5 S Schottky Diode Forward Voltagea VSD IS = 1.5 A, VGS = 0 V 0.79 1.1 V Dynamicb Total Gate Charge Qg 2.1 4.0 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 2.4 A 0.3 nC Gate-Drain Charge Qgd 0.4 Turn-On Delay Time td(on) 10 17 Rise Time tr VDD = 10 V, RL = 10 W 30 50 Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 14 25 ns Fall Time tf 6 12 Source-Drain Reverse Recovery Time trr IF = 3.0 A, di/dt = 100 A/ms 30 50 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit IF = 0.5 0.42 0.48 Forward Voltage Drop VF IF = 0.5, TJ = 125_C 0.33 0.4 V Vr = 20 0.002 0.100 Maximum Reverse Leakage Current Irm Vr = 20, TJ = 75_C 0.06 1 mA rm Vr = 20, TJ = 125_C 1.5 10 Junction Capacitance CT Vr = 10 V 31 pF |
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Description similaire - SI3812DV |
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