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74AUP1G0832GW Fiches technique(PDF) 5 Page - NXP Semiconductors

No de pièce 74AUP1G0832GW
Description  Low-power 3-input AND-OR gate
Download  19 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AUP1G0832GW Fiches technique(HTML) 5 Page - NXP Semiconductors

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74AUP1G0832_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01.00 — 26 January 2006
5 of 19
Philips Semiconductors
74AUP1G0832
Low-power 3-input AND-OR gate
9.
Limiting values
[1]
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are
observed.
[2]
For SC-88 packages: above 87.5
°C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C the value of Ptot derates linearly with 2.4 mW/K.
Fig 5.
2-input AND gate
Fig 6.
2-input OR gate
Fig 7.
2-input OR gate
Fig 8.
3-input gate with the Boolean
function: Y = (A
× B) + C
001aad944
1
2
3
6
5
4Y
VCC
B
A
A
B
Y
001aad945
1
2
3
6
5
4Y
Y
C
B
B
C
VCC
001aad946
1
2
3
6
5
4Y
Y
C
A
A
C
VCC
001aad947
1
2
3
6
5
4Y
C
A
B
VCC
A
B
C
Y
Table 7:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+4.6
V
IIK
input clamping
current
VI <0V
-
−50
mA
VI
input voltage
[1]
−0.5
+4.6
V
IOK
output clamping
current
VO <0V
-
−50
mA
VO
output voltage
active mode and
Power-down mode
[1]
−0.5
+4.6
V
IO
output current
VO =0 VtoVCC
-
±20
mA
ICC
quiescent supply
current
-
+50
mA
IGND
ground current
-
−50
mA
Tstg
storage temperature
−65
+150
°C
Ptot
total power
dissipation
Tamb = −40 °C to +125 °C
[2] -
250
mW


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