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TC7PA19AFE Datasheet(Fiches technique) 1 Page - Toshiba Semiconductor

Numéro de pièce TC7PA19AFE
Description  CMOS Digital Integrated Circuit Silicon Monolithic
Télécharger  7 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TC7PA19AFE
2005-11-29
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7PA19AFE
Chip Select Decoder
Features
• Operating voltage range: VCC = 1.4~3.6 V
• High-speed operation: tpd = 3.3 ns (max) at VCC = 3.0~3.6 V
tpd = 3.9 ns (max) at VCC = 2.3~2.7 V
tpd = 8.0 ns (max) at VCC = 1.65~1.95 V
tpd = 10.0 ns (max) at VCC = 1.4~1.6 V
• High-level output current:
IOH/IOL = ±24 mA (min) at VCC = 3.0 V
IOH/IOL = ±18 mA (min) at VCC = 2.3 V
IOH/IOL = ±4 mA (min) at VCC = 1.4 V
• 3.6 V tolerant inputs
Maximum Ratings (Ta = 25°C)
Note 1: High or Low state. The IOUT maximum rating must be adhere to.
Note 2: VOUT < GND, VOUT > VCC
(ES6)
Weight: 0.003 g (typ.)
Characteristics
Symbol
Value
Unit
Power supply voltage
VCC
−0.5~4.6
V
DC input voltage
VIN
−0.5~4.6
V
DC output voltage
VOUT
−0.5~VCC + 0.5
(Note 1)
V
Input diode current
IIK
−50
mA
Output diode current
IOK
±50 (Note 2)
mA
DC output current
IOUT
+50
mA
Power dissipation
PD
150
mW
DC VCC/ground current
ICC
±100
mA
Storage temperature
Tstg
−65~150
°C
A
GND
G
1
2
3
6
4
5
Y0
VCC
Y1
Pin Assignment (top view)
Product name
R N
Marking
SON6-P-0.50




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