FDP33N25 datasheet(4/8 Pages) FAIRCHILD

No de pièce	FDP33N25

Description	250V N-Channel MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FDP33N25 Rev A

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS = 10 V

2. I

D = 16.5 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. V

GS = 0 V

2. I

D = 250 μA

T

J, Junction Temperature [

oC]

25

50

75

100

125

150

0

10

20

30

40

T

C, Case Temperature [

oC]

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10 μs

DC

10 ms

100 μs

Operation in This Area

is Limited by R

DS(on)

* Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

* N otes :

1. Z

θJC( t) = 0.53

oC/W Max.

2. D uty Factor, D = t

1/t2

3. T

JM - T C = P DM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, S q uare W av e P uls e D uration [s ec]

t1

PDM

t2

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FDP33N25 Fiches technique(PDF) 4 Page - Fairchild Semiconductor

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