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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BF998R Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BF998R Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page  1996 Aug 01 3 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. 2. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 30 mA ±IG1 gate 1 current − 10 mA ±IG2 gate 2 current − 10 mA Ptot total power dissipation; BF998 up to Tamb =60 °C; see Fig.3; note 1 − 200 mW up to Tamb =50 °C; see Fig.3; note 2 − 200 mW Ptot total power dissipation; BF998R up to Tamb =50 °C; see Fig.4; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.3 Power derating curves; BF998. handbook, halfpage 0 100 0 200 100 200 (mW) Ptot max (2) (1) MLA198 Tamb ( C) o (1) Ceramic substrate. (2) Printed-circuit board. Fig.4 Power derating curve; BF998R. handbook, halfpage 0 100 0 200 100 200 (mW) Ptot max MGA002 Tamb (°C) |
Numéro de pièce similaire - BF998R |
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Description similaire - BF998R |
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