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BF861 Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BF861 Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1997 Sep 04 4 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C; VDS = 8 V; VGS = 0; unless otherwise specified. SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient; note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA −25 −− V VGSoff gate-source cut-off voltage ID =1 µA BF861A −0.2 −−1V BF861B −0.5 −−1.5 V BF861C −0.8 −−2V VGSS gate-source forward voltage VDS = 0; IG =1mA −− 1V IDSS drain current BF861A 2 − 6.5 mA BF861B 6 − 15 mA BF861C 12 − 25 mA IGSS gate cut-off current VGS = −20 V; VDS =0 −−−1nA y fs forward transfer admittance BF861A 12 − 20 mS BF861B 16 − 25 mS BF861C 20 − 30 mS gos common source output conductance BF861A −− 200 µS BF861B −− 250 µS BF861C −− 300 µS Ciss input capacitance f = 1 MHz −− 10 pF Crss reverse transfer capacitance f = 1 MHz − 2.1 2.7 pF Vn/√B equivalent input noise voltage VGS = 0; f = 1 MHz − 1.5 − nV/ √Hz |
Numéro de pièce similaire - BF861 |
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Description similaire - BF861 |
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