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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BF859 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BF859 Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 Apr 14 3 Philips Semiconductors Product specification NPN high-voltage transistor BF859 THERMAL CHARACTERISTICS CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient 62.5 K/W Rth j-mb thermal resistance from junction to mounting base 12.5 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 250 V − 0.1 µA IEBO emitter cut-off current IC = 0; VEB =5V − 100 nA hFE DC current gain IC = 30 mA; VCE =10V 26 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 6 mA − 1V Cre feedback capacitance IC =ic = 0; VCE = 30 V; f = 1 MHz − 3pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 100 MHz 90 − MHz |
Numéro de pièce similaire - BF859 |
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Description similaire - BF859 |
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