BF556B datasheet(8/11 Pages) PHILIPS

No de pièce	BF556B

Description	N-channel silicon junction field-effect transistors

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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8 / 11 page

1996 Jul 29

8

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF556A; BF556B; BF556C

Fig.16 Common-source input admittance; typical

values.

VDS = 10 V; ID = 1 mA; Tamb =25 °C.

handbook, halfpage

MRC142

102

10−2

10

102

103

10−1

1

10

bis

gis

gis, bis

(mS)

f (MHz)

Fig.17 Common-source transfer admittance;

typical values.

VDS = 10 V; ID = 1 mA; Tamb =25 °C.

handbook, halfpage

MRC141

10

1

10−1

10

102

103

−bfs

gfs

gfs, −bfs

(mS)

f (MHz)

Fig.18 Common-source reverse admittance;

typical values.

VDS = 10 V; ID = 1 mA; Tamb =25 °C.

handbook, halfpage

MRC144

−10−3

−10−2

10

102

103

−10−1

−1

−10

brs

grs

brs, grs

(mS)

f (MHz)

VDS = 10 V; ID = 1 mA; Tamb =25 °C.

Fig.19 Common-source output admittance;

typical values.

handbook, halfpage

MRC143

10

1

10−1

10−2

10

102

103

bos

gos

bos, gos

(mS)

f (MHz)

Numéro de pièce similaire - BF556B

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Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BF545A	100Kb / 12P	N-channel silicon junction field-effect transistors 1996 Jul 29
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InterFET Corporation	SMP5462	213Kb / 10P	N-Channel Silicon Junction Field-Effect Transistors
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Siemens Semiconductor G...	BF246A	127Kb / 6P	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
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