BF245C datasheet(8/11 Pages) PHILIPS

No de pièce	BF245C

Description	N-channel silicon field-effect transistors

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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8 / 11 page

1996 Jul 30

8

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF245A; BF245B; BF245C

Fig.16 Input capacitance as a function of

gate-source voltage; typical values.

VDS = 20 V; f = 1 MHz; Tamb =25 °C.

handbook, halfpage

0

6

4

2

0

−2

−10

MGE777

−4

−6

−8

VGS (V)

Cis

(pF)

typ

Fig.17 Reverse transfer capacitance as a function

of gate-source voltage; typical values.

VDS = 20 V; f = 1 MHz; Tamb =25 °C.

handbook, halfpage

0

−10

1.5

0.5

MGE781

1

Crs

(pF)

−2

−4

−6

−8

VGS (V)

typ

Fig.18 Forward transfer admittance as a function of

drain current; typical values.

handbook, halfpage

8

6

0

MGE791

4

2

|yfs|

(mA/V)

ID (mA)

0

20

10

15

5

BF245A

BF245B

BF245C

VDS = 15 V; f = 1 kHz; Tamb =25 °C.

Fig.19 Gate-source cut-off voltage as a function of

drain current; typical values.

VDS = 15 V; Tj =25 °C.

handbook, halfpage

010

30

−10

−0

MGE784

20

−2

−4

−6

−8

BF245A

IDSS at VGS = 0 (mA)

VGSoff

at ID = 10 nA

(V)

BF245B

BF245C

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