BF1202WR datasheet(3/16 Pages) PHILIPS

No de pièce	BF1202WR

Description	N-channel dual-gate PoLo MOS-FETs

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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3 / 16 page

2000 Mar 29

3

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate PoLo MOS-FETs

BF1202; BF1202R;

BF1202WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Ts is the temperature of the soldering point of the source lead.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

10

V

ID

drain current

−

30

mA

IG1

gate 1 current

−±10

mA

IG2

gate 2 current

−±10

mA

Ptot

total power dissipation

BF1202; BF1202R

Ts ≤ 113 °C; note 1

−

200

mW

BF1202WR

Ts ≤ 119 °C; note 1

−

200

mW

Tstg

storage temperature

−65

+150

°C

Tj

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

BF1202; BF1202R

185

K/W

BF1202WR

155

K/W

handbook, halfpage

050

(1)

(2)

Ts (°C)

Ptot

(mW)

100

200

250

0

200

150

100

50

MCD951

Fig.4 Power derating curve.

(1) BF1202WR.

(2) BF1202; BF1202R.

Numéro de pièce similaire - BF1202WR

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BF1202WR	189Kb / 15P	N-channel dual-gate PoLo MOS-FETs 2010 Sep 16
	BF1202WR	9Mb / 130P	RF Manual 16th edition June 2012
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Fabricant	No de pièce	Fiches technique	Description
Quanzhou Jinmei Electro...	BF1202_2015	129Kb / 16P	N-channel dual-gate PoLo MOS-FETs
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NXP Semiconductors	BF1202	189Kb / 15P	N-channel dual-gate PoLo MOS-FETs 2010 Sep 16
Quanzhou Jinmei Electro...	BF1202	129Kb / 16P	N-channel dual-gate PoLo MOS-FETs
Quanzhou Jinmei Electro...	BF1201_2015	127Kb / 16P	N-channel dual-gate PoLo MOS-FETs
NXP Semiconductors	BF1202.215	189Kb / 15P	N-channel dual-gate PoLo MOS-FETs 2010 Sep 16
Quanzhou Jinmei Electro...	BF1201	127Kb / 16P	N-channel dual-gate PoLo MOS-FETs
	BF1105_2015	125Kb / 16P	N-channel dual-gate MOS-FETs
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