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BF1202WR Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BF1202WR Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 16 page 2000 Mar 29 3 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 10 V ID drain current − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation BF1202; BF1202R Ts ≤ 113 °C; note 1 − 200 mW BF1202WR Ts ≤ 119 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point BF1202; BF1202R 185 K/W BF1202WR 155 K/W handbook, halfpage 050 (1) (2) Ts (°C) Ptot (mW) 100 200 250 0 200 150 150 100 50 MCD951 Fig.4 Power derating curve. (1) BF1202WR. (2) BF1202; BF1202R. |
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