BF1202WR datasheet(7/16 Pages) PHILIPS

No de pièce	BF1202WR

Description	N-channel dual-gate PoLo MOS-FETs

Download	16 Pages

Scroll/Zoom	100%

Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

Logo

7 / 16 page

2000 Mar 29

7

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate PoLo MOS-FETs

BF1202; BF1202R;

BF1202WR

handbook, halfpage

02

46

40

30

10

0

20

MCD960

VG2-S (V)

IG1

(

µA)

4 V

3.5 V

3 V

4.5 V

VGG = 5 V

Fig.13 Gate 1 current as a function of gate 2

voltage; typical values.

VDS = 5 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG); see Fig.21.

handbook, halfpage

01

2

4

0

−50

−10

3

VAGC (V)

gain

reduction

(dB)

−20

−30

−40

MCD961

Fig.14 Typical gain reduction as a function of the

AGC voltage; see Fig.21.

VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ;

f = 50 MHz; Tamb =25 °C.

handbook, halfpage

0

gain reduction (dB)

10

50

120

110

90

80

100

20

30

40

MCD962

Vunw

(dB

µV)

Fig.15 Unwanted voltage for 1% cross-modulation

as a function of gain reduction; typical

values; Fig.21.

VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ;

f= 50 MHz; funw = 60 MHz; Tamb =25 °C.

handbook, halfpage

0

gain reduction (dB)

10

50

16

12

4

0

8

20

30

40

MCD963

ID

(mA)

Fig.16 Drain current as a function of gain

reduction; typical values; see Fig.21.

VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ;

f = 50 MHz; Tamb =25 °C.

Numéro de pièce similaire - BF1202WR

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BF1202WR	189Kb / 15P	N-channel dual-gate PoLo MOS-FETs 2010 Sep 16
	BF1202WR	9Mb / 130P	RF Manual 16th edition June 2012
	BF1202WR	189Kb / 15P	N-channel dual-gate PoLo MOS-FETs 2010 Sep 16

More results

Description similaire - BF1202WR

Fabricant	No de pièce	Fiches technique	Description
Quanzhou Jinmei Electro...	BF1202_2015	129Kb / 16P	N-channel dual-gate PoLo MOS-FETs
NXP Semiconductors	BF1201	113Kb / 16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
NXP Semiconductors	BF1202	189Kb / 15P	N-channel dual-gate PoLo MOS-FETs 2010 Sep 16
Quanzhou Jinmei Electro...	BF1202	129Kb / 16P	N-channel dual-gate PoLo MOS-FETs
Quanzhou Jinmei Electro...	BF1201_2015	127Kb / 16P	N-channel dual-gate PoLo MOS-FETs
NXP Semiconductors	BF1202.215	189Kb / 15P	N-channel dual-gate PoLo MOS-FETs 2010 Sep 16
Quanzhou Jinmei Electro...	BF1201	127Kb / 16P	N-channel dual-gate PoLo MOS-FETs
	BF1105_2015	125Kb / 16P	N-channel dual-gate MOS-FETs
	BF1109_2015	120Kb / 16P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF904	303Kb / 14P	N-channel dual gate MOS-FETs Rev. 06-13 November 2007

More results

BF1202WR Fiches technique(PDF) 7 Page - NXP Semiconductors

BF1202WR Fiches technique(HTML) 7 Page - NXP Semiconductors

Numéro de pièce similaire - BF1202WR

Description similaire - BF1202WR

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Fiches technique Télécharger

Lien URL