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BDX44 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BDX44 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Jul 02 2 Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – print hammers – solenoids – relay and lamp drivers. DESCRIPTION NPN Darlington transistor in a TO-126; SOT32 plastic package. PNP complements: BDX45 and BDX47. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. handbook, halfpage 12 3 Top view MAM349 3 2 1 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BDX42 −− 60 V BDX43 −− 80 V BDX44 −− 90 V VCES collector-emitter voltage VBE =0 BDX42 −− 45 V BDX43 −− 60 V BDX44 −− 80 V IC collector current (DC) −− 1A Ptot total power dissipation Tamb ≤ 25 °C −− 1.25 W Tmb ≤ 100 °C −− 5W hFE DC current gain IC = 150 mA; VCE = 10 V 1000 −− IC = 500 mA; VCE = 10 V 2000 −− fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − MHz |
Numéro de pièce similaire - BDX44 |
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Description similaire - BDX44 |
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