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BCY70 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BCY70 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Jul 11 3 Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BCY70 −−50 V BCY71 −−45 V VCEO collector-emitter voltage open base BCY70 −−40 V BCY71 −−45 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−200 mA ICM peak collector current −−200 mA IBM peak base current −−100 mA Ptot total power dissipation Tamb ≤ 25 °C − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 500 K/W Rth j-c thermal resistance from junction to case 150 K/W |
Numéro de pièce similaire - BCY70 |
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Description similaire - BCY70 |
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