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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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STTH812 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STTH812 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 11 page  March 2006 Rev 1 1/11 11 STTH812 Ultrafast recovery - 1200 V diode Main product characteristics Features and benefits ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature ■ Insulated packages: – TO-220Ins Electrical insulation = 2500 VRMS Capacitance = 7 pF – TO-220FPAC Electrical insulation = 2000 VRMS Capacitance = 12 pF Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. Order codes IF(AV) 8 A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 50 ns Part Number Marking STTH812D STTH812D STTH812G STTH812G STTH812G-TR STTH812G STTH812FP STTH812FP STTH812DI STTH812DI K A TO-220FPAC STTH812FP D2PAK STTH812G TO-220AC STTH812D K K A A K A NC A K TO-220Ins STTH812DI www.st.com |
Numéro de pièce similaire - STTH812 |
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Description similaire - STTH812 |
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