Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼
Nom de la pièce
         Description


LM3207 Datasheet(Fiches technique) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Numéro de pièce LM3207
Description  650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO
Télécharger  19 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo 

 
 5 page
background image
System Characteristics The following spec table entries are guaranteed by design providing the component
values in the typical application circuit are used (L = 3.0µH, (DCR = 0.12
Ω, FDK MIPW3226D3R0M);
C
IN = 10µF, (6.3V, 0805, TDK C2012X5R0J106K); COUT = 4.7µF, (6.3V, 0603, TDK C1608X5R0J475M); CLDO = 100nF,
(10V, 0402, TDK C1005X5R1A104KT) (or 220nF, (6.3V, 0402, TDK C1005X5R0J224KT))) . These parameters are not
guaranteed by production testing. Min and Max values are specified over the V
IN range = 2.7V to 5.5V and over the ambi-
ent temp range T
A = −30˚C to 85˚C unless otherwise specified. Typical values are specified at PVIN = EN = 3.6V and TA =
25˚C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
LDO
PSRR
Power Supply Rejection
Ratio
Offset Freq = 1Khz, C
out = 100nF,
I
out = 1mA, PVin = Vout(nom) + 0.5V
50
dB
V
LDO(NOISE)
Output Noise Voltage
BW = 10Hz to 100Khz, I
out = 1mA
30
uVrms
t
LDO, ON
Time to reach 90% of
V
LDO(nom)
after EN
LDO
signal goes high.
C
LDO = 100nF, PWM mode assumed to
be fully functional before EN
LDO goes
high. PV
in =3V, Iout=5mA (Note 12)
3uS
C
LDO = 220nF, PWM mode assumed to
be fully functional before EN
LDO goes
high. PV
in =3V, Iout=5mA (Note 12)
5uS
t
LDO, OFF
Time to reach 10% of
V
LDO(nom)
after EN
LDO
signal goes low.
C
LDO = 100nF, PVin = 3V, Iout = 0mA
(Note 12)
3
uS
C
LDO = 220nF, PVin = 3V, Iout = 0mA
(Note 12)
5
Switcher
T
RESPONSE
(Rise time)
Time for V
OUT to rise
from 0.8V to 3.6V
PV
IN = 4.2V, COUT = 4.7uF, L = 3.0uH,
R
LOAD = 5.5
20
30
µs
T
RESPONSE (Fall
time)
Time for V
OUT to fall
from 3.6V to 0.8V
PV
IN = 4.2V, COUT = 4.7uF, L = 3.0uH,
R
LOAD =10
20
30
µs
C
CON
V
CON input capacitance
V
CON = 1V,
Test frequency = 100 kHz
20
pF
V
CON Linearity
Linearity in control
range 0.32V to 1.44V
PV
IN = 3.9V, Monotonic in nature
-3
+3
%
T
_ON
Turn on time
(time for output to reach
3.6V from Enable low to
high transition)
EN = Low to High, PV
IN = 4.2V,
V
O = 3.6V, COUT = 4.7µF,
I
OUT
≤ 1mA
70
100
µs
η
Efficiency
(L = 3.0µH, DCR
100m
Ω)
PV
IN = 3.6V, VOUT = 0.8V, IOUT = 90mA
81
%
PV
IN = 3.9V, VOUT = 3.4V, IOUT = 400mA
95
%
V
O_ripple
Ripple voltage, PWM
mode
PV
IN = 3V to 4.5V, VOUT = 0.8V,
I
OUT = 10mA to 400mA, (Note 11)
10
mVp-p
Line_tr
Line transient response
PV
IN = 600mV perturbance,
T
RISE =TFALL = 10µs, VOUT = 0.8V,
I
OUT = 100mA
50
mV
Load_tr
Load transient response PV
IN = 3.1/3.6/4.5V, VOUT = 0.8V,
transients up to 100mA,
T
RISE =TFALL = 10µs
50
mV
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2: All voltages are with respect to the potential at the GND pins. The LM3207 is designed for mobile phone applications where turn-on after power-up is
controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry.
Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V.
Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150˚C (typ.) and disengages at TJ =
130˚C (typ.).
Note 4: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
de-rated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125˚C), the maximum power
dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the
following equation: TA-MAX =TJ-MAX-OP –(θJA xPD-MAX).
www.national.com
5




Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19 


Datasheet Download



Numéro de composants électroniques

Numéro de pièceDescription des composantsHtml ViewFabricant
LM3202650mA Miniature Adjustable Step-Down DC-DC Converter for RF Power Amplifiers 1 2 3 4 5 MoreNational Semiconductor (TI)
LM3205650mA Miniature Adjustable Step-Down DC-DC Converter for RF Power Amplifiers 1 2 3 4 5 MoreNational Semiconductor (TI)
LM3200Miniature Adjustable Step-Down DC-DC Converter with Bypass Mode for RF Power Amplifiers 1 2 3 4 5 MoreNational Semiconductor (TI)
LM3204Miniature Adjustable Step-Down DC-DC Converter with Bypass Mode for RF Power Amplifiers 1 2 3 4 5 MoreNational Semiconductor (TI)
LM2706Miniature Variable Step-Down DC-DC Converter with Bypass for RF Power Amplifiers 1 2 3 4 5 MoreNational Semiconductor (TI)
LM3203Step-Down DC-DC Converter with Bypass Mode for CDMA / WCDMA RF Power Amplifiers 1 2 3 4 5 MoreNational Semiconductor (TI)
LM2614400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers 1 2 3 4 5 MoreNational Semiconductor (TI)
LM3670Miniature Step-Down DC-DC Converter for Ultra Low Voltage Circuits 1 2 3 4 5 MoreNational Semiconductor (TI)
DPA424Highly Integrated DC-DC Converter ICs for Distributed Power Architectures 1 2 3 4 5 MorePower Integrations, Inc.
SI9176High Performance Step-Down DC-DC Converter With Adjustable Output Voltage 1 2 3 4 5 MoreVishay Siliconix

Lien URL

AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Favoris   |   Echange de liens   |   Fabricants
All Rights Reserved © Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl