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BC850W Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BC850W Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 12 2 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. MARKING Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849BW 2B ∗ BC850BW 2F ∗ BC849CW 2C ∗ BC850CW 2G ∗ PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT323) and symbol. handbook, halfpage 2 3 1 MAM062 3 2 1 Top view LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC849W − 30 V BC850W − 50 V VCEO collector-emitter voltage open base BC849W − 30 V BC850W − 45 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
Numéro de pièce similaire - BC850W |
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Description similaire - BC850W |
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