BDX53A datasheet(2/5 Pages) BOURNS

No de pièce	BDX53A

Description	NPN SILICON POWER DARLINGTONS

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Fabricant	BOURNS [Bourns Electronic Solutions]

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BDX53, BDX53A, BDX53B, BDX53C

NPN SILICON POWER DARLINGTONS

2

PRODU CT

INFORMA TION

MAY 1989 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 100 mA

IB = 0

(see Note 3)

BDX53

BDX53A

BDX53B

BDX53C

45

60

80

100

V

ICEO

Collector-emitter

cut-off current

VCE = 30 V

VCE = 40 V

VCE = 50 V

IB =0

BDX53

BDX53A

BDX53B

BDX53C

0.5

mA

ICBO

Collector cut-off

current

VCB = 45 V

VCB = 60 V

VCB = 80 V

VCB = 100 V

IE =0

BDX53

BDX53A

BDX53B

BDX53C

0.2

mA

IEBO

Emitter cut-off

current

VEB =

5 V

IC =0

2

mA

hFE

Forward current

transfer ratio

VCE =

3 V

IC = 3 A

(see Notes 3 and 4)

750

VBE(sat)

Base-emitter

saturation voltage

IB = 12 mA

IC = 3 A

(see Notes 3 and 4)

2.5

V

VCE(sat)

Collector-emitter

saturation voltage

IB = 12 mA

IC = 3 A

(see Notes 3 and 4)

2

V

VEC

Parallel diode

forward voltage

IE =

3 A

IB = 0

2.5

V

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

2.08

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

ton

Turn-on time

IC = 3 A

VBE(off) = -4.5 V

IB(on) = 12 mA

RL = 10 Ω

IB(off) = -12 mA

tp = 20 µs, dc ≤ 2%

1µs

toff

Turn-off time

5µs

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