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BC556B Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BC556B
Description  PNP general purpose transistors
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC556B Fiches technique(HTML) 2 Page - NXP Semiconductors

  BC556B Datasheet HTML 1Page - NXP Semiconductors BC556B Datasheet HTML 2Page - NXP Semiconductors BC556B Datasheet HTML 3Page - NXP Semiconductors BC556B Datasheet HTML 4Page - NXP Semiconductors BC556B Datasheet HTML 5Page - NXP Semiconductors BC556B Datasheet HTML 6Page - NXP Semiconductors BC556B Datasheet HTML 7Page - NXP Semiconductors BC556B Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 15
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC546 and BC547.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage1
3
2
MAM281
3
2
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC556
−−80
V
BC557
−−50
V
VCEO
collector-emitter voltage
open base
BC556
−−65
V
BC557
−−45
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
ICM
peak collector current
−−200
mA
IBM
peak base current
−−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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