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BC327-25 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BC327-25 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 15 2 Philips Semiconductors Product specification PNP general purpose transistor BC327 FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM281 3 2 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−50 V VCEO collector-emitter voltage open base −−45 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−500 mA ICM peak collector current −−1A IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 625 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
Numéro de pièce similaire - BC327-25 |
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Description similaire - BC327-25 |
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