Switching Chip Diode Series - 0603 / 1005

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Features

■

Lead free as standard

■

RoHS compliant*

■

Leadless

■

High speed

Applications

■

Cellular phones

■

PDAs

■

Desktop PCs and notebooks

■

Digital cameras

■

MP3 players

General Information

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

smaller electronic components.

Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size

format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current

of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with

Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government

regulations on lead-free components.

roll away much more difficult.

Parameter

Symbol

CDxxxx-S0180

CDxxxx-S01575

CDxxxx-S0180R

Unit

Forward Voltage (Max.)

VF

1.00

1.00

1.00

V

(If = 100 mA)

(If = 50 mA)

(If = 100 mA)

Capacitance Between Terminals (Max.)

CT

4

pF

(f = 100 MHz, Vr = 1 V DC)

Reverse Recovery Time (Max.)

trr

4

nS

(Vr = 6V, If = 10 mA, RL = 50 Ω)

Reverse Current (Max.)

IR

0.1

2.5

0.05

µA

(Vr = 80 V)

(Vr = 75 V)

(Vr = 75 V)

Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Parameter

Symbol

CDxxxx-S0180

CDxxxx-S01575

CDxxxx-S0180R

Unit

Repetitive Peak Reverse Voltage

VRRM

90

100

90

V

Reverse Voltage

VR

80

75

80

V

Average Forward Current

Io

100

150

100

mA

Forward Current, Surge Peak

Isurge

1*

4**

1*

A

Power Dissipation - CD0603

PD

150

150

150

mW

Power Dissipation - CD1005

300

300

300

Storage Temperature

TSTG

-40 to +125

°C

Junction Temperature

TJ

-40 to +125

°C

Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)

* Condition: 8.3 ms single half sine-wave superimposed on rate load

(JEDEC method).

** Condition: 1.0 µs single half sine-wave superimposed on rate load

(JEDEC method).

How To Order

CD 0603 - S 01 80 R

Common Code

Chip Diode

Package

• 0603

• 1005

Model

S = High Speed Switching

Average Forward Current (Io) Code

01 = 100 mA

015 = 150 mA

(Code x 1000 mA = Average Forward Current)

Reverse Voltage (VR) Code

80 = 80 V

75 = 75 V

Reverse Current Suffix

R = Low Leakage IR (CDxxxx-S0180R)