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BAT17 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BAT17 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 May 26 2 Philips Semiconductors Product specification Schottky barrier diode BAT17 FEATURES • Low forward voltage • Small SMD package • Low capacitance. APPLICATIONS • UHF mixer • Sampling circuits • Modulators • Phase detection. DESCRIPTION Planar Schottky barrier diode in a small SOT23 plastic SMD package. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 21 3 MAM171 2 n.c. 1 3 Marking code: A3p = made in Hong Kong; A3t = made in Malaysia . LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 4V IF continuous forward current − 30 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 100 °C |
Numéro de pièce similaire - BAT17 |
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Description similaire - BAT17 |
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