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BAS40-07 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BAS40-07 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 28 3 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT23 or SOT143B standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 40 V IF continuous forward current − 120 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 120 mA IFSM non-repetitive peak forward current tp < 10 ms − 200 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.3 IF =1mA 380 mV IF =10mA 500 mV IF =40mA 1V IR reverse current VR = 30 V; note 1; see Fig.4 1 µA VR = 40 V; note 1; see Fig.4 10 µA Cd diode capacitance f = 1 MHz; VR = 0 ; see Fig.6 5pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
Numéro de pièce similaire - BAS40-07 |
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Description similaire - BAS40-07 |
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